发明名称 Selective emitter solar cell and manufacturing method thereof
摘要 A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.
申请公布号 EP2568511(A2) 申请公布日期 2013.03.13
申请号 EP20120004735 申请日期 2012.06.25
申请人 LG ELECTRONICS INC. 发明人 JIN, YOONSIL;PARK, HYUNJUNG;CHOI, YOUNGHO;PARK, CHANGSEO
分类号 H01L31/18;H01L31/068 主分类号 H01L31/18
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