发明名称 |
Selective emitter solar cell and manufacturing method thereof |
摘要 |
A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer. |
申请公布号 |
EP2568511(A2) |
申请公布日期 |
2013.03.13 |
申请号 |
EP20120004735 |
申请日期 |
2012.06.25 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
JIN, YOONSIL;PARK, HYUNJUNG;CHOI, YOUNGHO;PARK, CHANGSEO |
分类号 |
H01L31/18;H01L31/068 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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