| 摘要 |
<p>A thin-film transistor includes: a gate electrode; a semiconductor layer separated from the gate electrode with a separation insulating layer in between; and a source electrode and a drain electrode that are connected with the semiconductor layer and are separated from each other. Between the source electrode and the drain electrode, a thickness of the separation insulating layer at a first region where the gate electrode does not overlap both the source electrode and the drain electrode is smaller than a thickness of the separation insulating layer at a second region where the gate electrode overlaps one or both of the source electrode and the drain electrode.</p> |
