| 摘要 |
Determining impurities in silicon, comprises (a) producing a monocrystalline rod from silicon, which is to be examined, by zone refining, where the mono-crystalline rod is introduced in a tube made of mono- or polycrystalline silicon with defined carbon- and dopant concentration, in at least one dilution step, and diluted monocrystalline silicon rod is produced from the rod and the tube by zone refining, and (ii) determining impurities in silicon, based on the diluted monocrystalline rod by photoluminescence or fourier transform infrared spectroscopy or both. |
