| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for an electron beam, an X-ray or EUV light simultaneously satisfying requirements for high sensitivity, high resolution, a good pattern shape, and good line-edge roughness in solving problems associated with performance improving techniques in micro processing of a semiconductor element using the electron beam, the X-ray or the EUV light, and to provide a pattern forming method using the composition. <P>SOLUTION: The positive resist composition for the electron beam, the X-ray or the EUV light contains (A) a resin which is decomposed by the action of an acid and consequently its rate of solution in an aqueous alkali solution is increased, (B) a compound which generates an acid when irradiated with an active ray or with radiation, (C) a compound which is decomposed by the action of an acid and generates an acid, and (D) an organic solvent, wherein a compound having a specific structure is included as a compound of the (C) component, and a pattern forming method using the positive resist composition is also claimed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
