| 摘要 |
1,164,418. Semi-conductor devices. SIEMENS A.G. 15 March, 1968 [16 March, 1967; 26 July, 1967], No. 12619/68. Heading H1K. [Also in Division C1] A semi-conductor device is produced by depositing a layer of Si 3 N 4 from the gas phase on to the surface of a semi-conductor body, adding an oxygen-containing gas to the reaction gas so as to deposit a layer of SiO 2 , covering the SiO 2 with a layer of photolacquer, locally exposing this layer to light and developing it so as to expose the SiO 2 , etching the SiO 2 in these areas, then etching the Si 3 N 4 with hot H 3 PO 4 , and finally introducing the desired dopants, e.g. using B or P vapour. The reaction gas may be a silazane or aminosilane or a mixture of a silane e.g. SiH 4 , a halogenated silane, e.g. SiCl 4 , an alkyl silane, or an aryl silane, with NH 3 or an amine. The oxygen containing gas may be O 2 , H 2 O, or CO 2 . The semi-conductor body may be of Si. |
