Z2FET field effect transistor with zero sub-threshold swing and zero impact ionisation

摘要

The FET has a first source/drain electrode (2) formed in a semiconductor material film (4) by an N-type doped zone. A second source/drain electrode (3) is formed in the material film by a P-type doped zone. An inter-electrode zone is formed in the material film. A first potential barrier generation device generates a potential barrier of flexible amplitude, and is connected electrically to a gate electrode (1). A second potential barrier generation device is electrically connected to a counter electrode (12) separated from the gate electrode by the material film.