| 摘要 |
1,219,189. Semi-conductor diodes. TRW SEMICONDUCTORS Inc. 29 March, 1968 [16 May, 1967], No. 15339/68. Heading H1K. A low voltage avalanche diode exhibiting reduced dynamic resistance and leakage current is made by forming an alloyed junction and then heating the junction to above 900‹ C. and then cooling at a rate of at least 200‹ C./minute to below the eutectic temperature. In the embodiment aluminium in the form of a ball, wire or piece of foil is placed on an N-type silicon wafer, heated rapidly to above the aluminiumsilicon eutectic temperature but below 900‹ C. and then cooled to below the eutectic at not more than 25‹ C. per minute. After further cooling to room temperature and removal of excess alloy the wafer is reheated at more than 50‹ C./minute to above 900‹ C. and then cooled at a rate of at least 200‹ C. per minute to below the eutectic temperature. The device is then completed and encapsulated in conventional manner. |
