| 摘要 |
There is provided a tantalum capacitor, including: a chip sintered body (11) formed by sintering a tantalum powder; and an anode lead-out line (12) formed of niobium (Nb) and having an insertion region positioned inside the chip sintered body (11) and a non-insertion region positioned outside of the chip sintered body (11), and thus, a niobium (Nb) wire is used as the anode lead-out line (12), thereby enhancing the binding force of the anode lead-out line (11) with the tantalum powder, so that equivalent series resistance (ESR) and leakage current (LC) characteristics may be improved.
|
