Tunnel transistor, logical gate comprising the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor

摘要

A tunnel transistor (1) comprising a drain (2), a source (4) and a first gate (6) and a second gate (10) for controlling current between the drain (2) and the source (4), wherein the first sides (9,13) of respectively the first and the second gate dielectric material (7,11) are positioned substantially along and substantially contact respectively a first and a second semiconductor part (14,15).