发明名称 |
Through-substrate via and redistribution layer with metal paste |
摘要 |
A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate includes a passivation layer and a substrate via that extends from the first side to a via depth such that it is reconfigurable into a through-substrate. The semiconductor device further includes a patterned masking layer on the first side of the substrate. The patterned masking layer includes a trench extending fully through the patterned masking layer. The trench has been filled with a redistribution conductor. The substrate via and the redistribution conductor include metal paste and together form one piece, such that there is no physical interface between the through-substrate via and the redistribution conductor. Thus, the parasitic resistance of this electrical connection is reduced.
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申请公布号 |
US8395267(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US200913126286 |
申请日期 |
2009.10.21 |
申请人 |
ROOZEBOOM FREDDY;VAN GRUNSVEN ERIC CORNELIS EGBERTUS;SANDERS FRANCISCUS HUBERTUS MARIE;BURGHOORN MARIA MATHEA ANTONETTA;NXP B.V. |
发明人 |
ROOZEBOOM FREDDY;VAN GRUNSVEN ERIC CORNELIS EGBERTUS;SANDERS FRANCISCUS HUBERTUS MARIE;BURGHOORN MARIA MATHEA ANTONETTA |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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