发明名称 |
Semiconductor device having backside redistribution layers |
摘要 |
Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.
|
申请公布号 |
US8395242(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113072445 |
申请日期 |
2011.03.25 |
申请人 |
OLIVER STEVE;FARNWORTH WARREN;MICRON TECHNOLOGY, INC. |
发明人 |
OLIVER STEVE;FARNWORTH WARREN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|