发明名称 |
Semiconductor memory device and driving method thereof |
摘要 |
A semiconductor device which stores data by using a transistor whose leakage current between source and drain in an off state is small as a writing transistor. In a matrix including a plurality of memory cells in which a drain of the writing transistor is connected to a gate of a reading transistor and the drain of the writing transistor is connected to one electrode of a capacitor, a gate of the writing transistor is connected to a writing word line; a source of the writing transistor is connected to a writing bit line; and a source and a drain of the reading transistor are connected to a reading bit line and a bias line. In order to reduce the number of wirings, the writing bit line or the bias line is substituted for the reading bit line in another column.
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申请公布号 |
US8395931(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113009034 |
申请日期 |
2011.01.19 |
申请人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO |
分类号 |
G11C11/24 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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