| 摘要 |
1,220,364. Etching. GENERAL ELECTRIC CO. 28 May, 1968 [29 May, 1967], No. 25426/68. Heading B6J. [Also in Division H1] Tapered side walls of an aperture in a silicon dioxide layer on the surface of a silicon semiconductor element 10 are achieved by coating the silicon dioxide layer 11 with a film 12 of a metal, such as gold, which is resistant to attack by etchants for silicon dioxide, and forming a tapered-walled aperture in the metal film, then etching in a bath to remove the exposed silicon dioxide layer whilst simultaneously removing the metal film at a uniform rate by means of an electrolytic deplating process. Hydrofluoric acid is used as the silicon dioxide etchant. The aperture in the metal film is produced by applying over the film a layer of polymeric material, containing a photolytically decomposable etchant for the metal, and a photographic positive transparency having zones of graduated transparency where the tapered walls are to be, so that during exposure to activating radiation chemically reactive species in the layer are generated in concentrations proportional to the radiation level at the layer which etch an aperture with tapered walls in the metal film 12. In an alternative embodiment, the metal film 12 with its tapered-walled aperture is directly deposited on the surface of the layer 11 of silicon dioxide by immersing the element and oxide layer in a liquid comprising a photolytically reactive material which is the source of the metal to be plated, and irradiating the surface of the oxide layer with activating radiation through a negative transparency when a metallic film is deposited on those areas of the oxide layer which are illuminated, the thickness of the film being dependent upon the intensity of illumination.
|
