发明名称 |
Semiconductor device and structure |
摘要 |
A semiconductor device including a first single crystal layer with first transistors and a first alignment mark; at least one metal layer overlying the first single crystal layer, wherein the at least one metal layer includes copper or aluminum; and a second layer including activated dopant regions, the second layer overlying the at least one metal layer, wherein the second layer includes second transistors, wherein the second transistors are processed aligned to the first alignment mark with less than 100 nm alignment error, and the second transistors include mono-crystal, horizontally-oriented transistors. |
申请公布号 |
US8395191(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20100900379 |
申请日期 |
2010.10.07 |
申请人 |
OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISRAEL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C.;WURMAN ZEEV;MONOLITHIC 3D INC. |
发明人 |
OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISRAEL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C.;WURMAN ZEEV |
分类号 |
H01L21/336;H01L21/76;H01L21/8234;H01L25/065;H01L29/76;H01L29/772 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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