发明名称 |
Methods of forming self-aligned through silicon via |
摘要 |
A method for forming a through silicon via (TSV) in a substrate may include forming a dielectric layer on the substrate; forming an opening through the dielectric layer and into the substrate using a single mask over the dielectric layer; expanding the opening in the dielectric layer, undercutting the single mask, to form an expanded upper portion; removing the single mask; and filling the opening, including the expanded upper portion, with a conductor. A resulting structure may include a substrate; a dielectric layer over the substrate; and a self-aligned through silicon via (TSV) extending through the dielectric layer and the substrate. |
申请公布号 |
US8394718(B1) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113229912 |
申请日期 |
2011.09.12 |
申请人 |
GAMBINO JEFFREY P.;LEIDY ROBERT K.;STAMPER ANTHONY K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO JEFFREY P.;LEIDY ROBERT K.;STAMPER ANTHONY K. |
分类号 |
H01L21/44;H01L21/311;H01L21/4763 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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