Forming method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device

摘要

An optimum forming method of performing a forming for a variable resistance element to maximize an operation window of the variable resistance element is provided. The forming method is used to initialize a variable resistance element (100). The forming method includes: a determination step (S35) of determining whether or not a current resistance value of the variable resistance element (100) is lower than a resistance value in a high resistance state; and a voltage application step (S36) of applying a voltage pulse having a voltage not exceeding a sum of a forming voltage and a forming margin when the determination is made that the current resistance value is not lower than the resistance value in the high resistance state (No at S35). The determination step (S35) and the voltage application step (S36) are repeated to process all memory cells in a memory array (202) (S34 to S37).