| 摘要 |
A light-emitting device (200) comprises an active region (210) configured to generate light in response to injected charge, and an n-type material layer (214) and a p-type material layer (212), wherein at least one of the n-type material layer (214) and the p-type material layer (212) is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant. |
