发明名称 TEMPERATURE BASED DRAM REFRESH
摘要 A system for controlling the refresh cycles of a DRAM cell array based upon a temperature measurement. During active mode, a refresh request indication based on a measured temperature is provided to a DRAM controller (e.g. of another integrated circuit die), wherein the DRAM controller initiates a refresh cycle of the DRAM cell array in response thereto. In a self refreshing mode, the DRAM controller does not initiate refresh cycles, but refresh cycles are performed by a controller on the integrated circuit die of the array based upon a temperature measurement.
申请公布号 KR101242809(B1) 申请公布日期 2013.03.12
申请号 KR20077012465 申请日期 2005.11.10
申请人 发明人
分类号 G11C11/401;G11C11/406 主分类号 G11C11/401
代理机构 代理人
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