发明名称 |
Vertical diodes for non-volatile memory device |
摘要 |
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device. |
申请公布号 |
US8394670(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113149807 |
申请日期 |
2011.05.31 |
申请人 |
HERNER SCOTT BRAD;CROSSBAR, INC. |
发明人 |
HERNER SCOTT BRAD |
分类号 |
H01L29/02;H01L45/00 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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