发明名称 |
Linear gate level cross-coupled transistor device with non-overlapping PMOS transistors and non-overlapping NMOS transistors relative to directions of gate electrodes |
摘要 |
A semiconductor device includes a cross-coupled transistor configuration formed by first and second PMOS transistors defined over first and second p-type diffusion regions, and by first and second NMOS transistors defined over first and second n-type diffusion regions, with each diffusion region electrically connected to a common node. Gate electrodes of the PMOS and NMOS transistors are formed by conductive features which extend in only a first parallel direction. The first and second p-type diffusion regions are formed in a spaced apart manner, such that no single line of extent that extends perpendicular to the first parallel direction intersects both the first and second p-type diffusion regions. The first and second n-type diffusion regions are formed in a spaced apart manner, such that no single line of extent that extends perpendicular to the first parallel direction intersects both the first and second n-type diffusion regions.
|
申请公布号 |
US8395224(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20100753758 |
申请日期 |
2010.04.02 |
申请人 |
BECKER SCOTT T.;MALI JIM;LAMBERT CAROLE;TELA INNOVATIONS, INC. |
发明人 |
BECKER SCOTT T.;MALI JIM;LAMBERT CAROLE |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|