发明名称 |
Solid-state imaging device |
摘要 |
A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
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申请公布号 |
US8395194(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113238537 |
申请日期 |
2011.09.21 |
申请人 |
YOKOYAMA HARUHISA;SAKOH HIROSHI;YAMASHITA KAZUHIRO;YASUHIRA MITSUO;HIROFUJI YUICHI;PANASONIC CORPORATION |
发明人 |
YOKOYAMA HARUHISA;SAKOH HIROSHI;YAMASHITA KAZUHIRO;YASUHIRA MITSUO;HIROFUJI YUICHI |
分类号 |
H01L27/148;H01L21/00;H01L27/14;H01L27/146;H04N5/335;H04N5/359;H04N5/369;H04N5/374 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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