发明名称 |
Solid state image pickup device and manufacturing method therefor |
摘要 |
A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
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申请公布号 |
US8395193(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201213364601 |
申请日期 |
2012.02.02 |
申请人 |
KOIZUMI TORU;SUGAWA SHIGETOSHI;UENO ISAMU;KOCHI TETSUNOBU;SAKURAI KATSUHITO;HIYAMA HIROKI;CANON KABUSHIKI KAISHA |
发明人 |
KOIZUMI TORU;SUGAWA SHIGETOSHI;UENO ISAMU;KOCHI TETSUNOBU;SAKURAI KATSUHITO;HIYAMA HIROKI |
分类号 |
H01L29/76;H04N1/028;H01L27/146;H01L31/10;H04N1/19 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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