发明名称 |
Display device |
摘要 |
At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied.
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申请公布号 |
US8395161(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201213492970 |
申请日期 |
2012.06.11 |
申请人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
H01L29/04;H01L51/50;G09F9/00;G09F9/30;G09G3/32;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/08;H01L27/108;H01L27/12;H01L27/32;H01L29/786;H01L31/036 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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