发明名称 |
Stable P-type semiconducting behaviour in Li and Ni codoped ZnO |
摘要 |
A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate. |
申请公布号 |
US8395152(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201213448472 |
申请日期 |
2012.04.17 |
申请人 |
RAO M. S. RAMACHANDRA;KUMAR E. SENTHIL;INDIAN INSTITUTE OF TECHNOLOGY MADRAS |
发明人 |
RAO M. S. RAMACHANDRA;KUMAR E. SENTHIL |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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