发明名称 Method for fabricating semiconductor lighting chip
摘要 A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.
申请公布号 US8394653(B2) 申请公布日期 2013.03.12
申请号 US201113216248 申请日期 2011.08.24
申请人 TU PO-MIN;HUANG SHIH-CHENG;LIN YA-WEN;HUANG CHIA-HUNG;YANG SHUN-KUEI;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 TU PO-MIN;HUANG SHIH-CHENG;LIN YA-WEN;HUANG CHIA-HUNG;YANG SHUN-KUEI
分类号 H01L21/00 主分类号 H01L21/00
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