发明名称 |
Thin film transistors having an additional floating channel and methods of manufacturing the same |
摘要 |
Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.
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申请公布号 |
US8395155(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20110929453 |
申请日期 |
2011.01.26 |
申请人 |
KIM EOK-SU;LEE SANG-YOON;RYU MYUNG-KWAN;PARK KYUNG-BAE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM EOK-SU;LEE SANG-YOON;RYU MYUNG-KWAN;PARK KYUNG-BAE |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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