发明名称 |
Reliability of high-K gate dielectric layers |
摘要 |
A method for improving the reliability of a high-k gate dielectric layer comprises incorporating a noble metal into a transistor gate stack that contains the high-k gate dielectric layer and annealing the transistor gate stack in a molecular hydrogen or deuterium containing atmosphere. The annealing process drives at least a portion of the molecular hydrogen or deuterium toward the high-k gate dielectric layer. When the molecular hydrogen or deuterium contacts the noble metal, it is converted into atomic hydrogen or deuterium that is able to treat the high-k gate dielectric layer and improve its reliability. |
申请公布号 |
US8394694(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20070725521 |
申请日期 |
2007.03.19 |
申请人 |
LAVOIE ADRIEN R.;BUDREVICH AARON A.;ASHUTOSH ASHUTOSH;CHANG HUICHENG;INTEL CORPORATION |
发明人 |
LAVOIE ADRIEN R.;BUDREVICH AARON A.;ASHUTOSH ASHUTOSH;CHANG HUICHENG |
分类号 |
H01L21/8238;H01L21/02 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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