Semiconductor device based on the cubic silicon carbide single crystal thin film

摘要

A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an AlxGa1-xAs (0.6>x≧0) layer and a cubic silicon carbide single crystal layer. The apparatus also includes a substrate on which a metal layer is formed. The multilayer structure is bonded to a surface of the metal layer with the AlxGa1-xAs (0.6>x≧0) in direct contact with the metal layer.