发明名称 Memory device having a clock skew generator
摘要 A memory device is provided with memory components and a clock skew generator, supporting at least two read and write operations that can occur coincidentally in read-read, read-write and write-write modes of operation of the memory device. The clock skew generator produces at least two stable and balanced clock channels carrying the at least two clock signals and varies relative timing of the clock signal edges so as to displace the edges in time, in those modes of operation wherein simultaneous edges would lead to detrimental loading.
申请公布号 US8395950(B2) 申请公布日期 2013.03.12
申请号 US20100968582 申请日期 2010.12.15
申请人 LIN TZU-KUEI;LIAO HUNG-JEN;CHOU SHAO-YU;WU CHING-WEI;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN TZU-KUEI;LIAO HUNG-JEN;CHOU SHAO-YU;WU CHING-WEI
分类号 G11C7/00 主分类号 G11C7/00
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