发明名称 Substrate-penetrating electrical connections
摘要 A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
申请公布号 US8395057(B2) 申请公布日期 2013.03.12
申请号 US20070439568 申请日期 2007.09.04
申请人 RANGSTEN PELLE;JOHANSSON HAKAN;BEJHED JOHAN;NANOSPACE AB 发明人 RANGSTEN PELLE;JOHANSSON HAKAN;BEJHED JOHAN
分类号 H05K1/11;F03H99/00;H01L21/44;H01L23/48;H01R12/58;H05K1/09 主分类号 H05K1/11
代理机构 代理人
主权项
地址