发明名称 |
Substrate-penetrating electrical connections |
摘要 |
A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
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申请公布号 |
US8395057(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20070439568 |
申请日期 |
2007.09.04 |
申请人 |
RANGSTEN PELLE;JOHANSSON HAKAN;BEJHED JOHAN;NANOSPACE AB |
发明人 |
RANGSTEN PELLE;JOHANSSON HAKAN;BEJHED JOHAN |
分类号 |
H05K1/11;F03H99/00;H01L21/44;H01L23/48;H01R12/58;H05K1/09 |
主分类号 |
H05K1/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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