| 摘要 |
Disclosed is a NAND flash memory which is vertically elongated from a substrate and has a multi-layered lamination structure. A control gate is formed by alternating with an interlayer insulating film. In addition, the control gate is separated in a direction parallel to the substrate through a barrier insulating film. Therefore, only one side of the control gate is in contact with a blocking insulating film. As a result, independent charge-trapping is enabled from one stack structure to both sides thereof. Consequently, the density of flash memory is increased and charge controllability is improved. |
