DEVICE ISOLATION STRUCTURE, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to minimize interference between adjacent cells by reducing a coupling effect between the adjacent cells. CONSTITUTION: A device isolation structure(20) is arranged on the substrate and defines an active region and includes a bottom insulation pattern(11a), a top insulation pattern(21a), and a gap region(17). The gap region is located between the bottom insulation pattern and the top insulation pattern. The bottom insulation pattern includes a silicon oxide layer. The top insulation pattern includes a buried insulation recess pattern and a spacer recess pattern(15c) arranged on both sidewalls of the buried insulation recess pattern.