SPUTTERING TARGET, AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME

摘要

PURPOSE: A sputtering target and a manufacturing method of a magnetic memory using the same are provided to cheaply prepare a target main body without a screw hole in the target main body. CONSTITUTION: A sputtering target comprises a target main body(10) with a thickness of 3mm or less, containing MgO as main ingredient. The sputtering target is used for a magnetic tunnel junction device. The target main body is supported on a baking plate(12). The thickness(h1) of the target main body and the thickness(h2) of the baking plate satisfy equation1, h1+h2 <= 5mm. The backing plate is made of one among a stainless steel, Al alloy, and W alloy. The external diameter of the target main body and the external diameter of the baking plate satisfy equation 2, T1 >= t2. A hole for mounting a jig is formed near the edge of the upper side of the target main body. The jig fixes the sputtering target at a sputtering device.