THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to lower the parasitic capacitance between a thin film transistor and a pixel electrode by using an organic passivation layer having low permittivity. CONSTITUTION: A first inorganic passivation layer(118) is made of an inorganic insulating material. An organic passivation layer(128) is made of an organic insulating material. The organic insulating material includes a dendrimer binder and an acrylic binder. A pixel electrode(122) is connected to a thin film transistor. A second inorganic passivation layer(128) is made of an inorganic insulating material.