发明名称 |
MULTI-FIN DEVICE AND METHOD OF MAKING SAME |
摘要 |
PURPOSE: A multi-fin device and a manufacturing method thereof are provided to finely control a channel width by controlling a thickness of an insulation layer. CONSTITUTION: A multi-fin device includes a substrate(4) and a plurality of fins formed on the substrate. A source region and a drain region are formed in each fin. The insulation layer is formed on the substrate and includes a first thickness near a first surface of a first fin and a second thickness near an opposite side to the fin. The first thickness is different from the second thickness. A continuous gate structure(14) is formed by overlaying the plurality of fins and is adjacent to one sidewall of the fin and the upper surface of each fin. |
申请公布号 |
KR20130025314(A) |
申请公布日期 |
2013.03.11 |
申请号 |
KR20110114628 |
申请日期 |
2011.11.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU CHI WEN;WANG CHAO HSIUNG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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