发明名称 MULTI-FIN DEVICE AND METHOD OF MAKING SAME
摘要 PURPOSE: A multi-fin device and a manufacturing method thereof are provided to finely control a channel width by controlling a thickness of an insulation layer. CONSTITUTION: A multi-fin device includes a substrate(4) and a plurality of fins formed on the substrate. A source region and a drain region are formed in each fin. The insulation layer is formed on the substrate and includes a first thickness near a first surface of a first fin and a second thickness near an opposite side to the fin. The first thickness is different from the second thickness. A continuous gate structure(14) is formed by overlaying the plurality of fins and is adjacent to one sidewall of the fin and the upper surface of each fin.
申请公布号 KR20130025314(A) 申请公布日期 2013.03.11
申请号 KR20110114628 申请日期 2011.11.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIU CHI WEN;WANG CHAO HSIUNG
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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