| 摘要 |
<p>PURPOSE: A MOSFET with a vertical channel and a logic gate device using the same are provided to reduce an area occupied by a device by forming a source and a drain on one side of a fence type semiconductor and a gate on the lateral side of the fence type semiconductor. CONSTITUTION: A fence type semiconductor(11) has one vertical side and protrudes from a semiconductor substrate. A source and a drain are separated from each other in a channel direction of one vertical side of the semiconductor. A gate(50) is formed on the vertical side between the source and the drain by interposing a gate insulation layer(40).</p> |
