| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to selectively remove a sacrificial layer without attacking a bottom electrode in a dip-out process by changing the sacrificial layer of a silicon film into the sacrificial layer of an oxide film through an oxidation process. CONSTITUTION: A sacrificial layer of a silicon film is formed on the upper side of a substrate(11) including a storage node contact plug(14). An open part exposing the storage node contact plug is formed by etching the sacrificial layer of the silicon film. The sacrificial layer of the silicon film is changed into a sacrificial layer(16A) of an oxide film. A bottom electrode is formed on a bottom part and a sidewall of the open part. A cylindrical bottom electrode is formed by dipping out the sacrificial layer of the oxide film. [Reference numerals] (AA) Oxidation
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