| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to maintain the capacitance of a capacitor and to reduce the height of the capacitor by applying a storage node contact as a part of the capacitor. CONSTITUTION: An interlayer dielectric layer is formed on a substrate(11). A storage node contact plug(14) connected to the substrate is formed via the interlayer dielectric layer. A contact hole(13A) to expose a part of the substrate is formed by selectively etching the storage node contact plug. A sacrificial capping layer fills the contact hole. A sacrificial layer(17) is formed on the upper side of the interlayer dielectric layer including the sacrificial layer. An open part(19) to expose the sacrificial layer is formed by etching the sacrificial layer. A bottom electrode is formed on the sidewalls and the bottom sides of the open part and the contact hole.
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