SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the coupling efficiency between a control gate and a floating gate by surrounding the floating gate with the control gate. CONSTITUTION: A floating gate(FG) is formed along a vertical channel layer. The floating gate surrounds the vertical channel layer. A dielectric layer is formed along a tunnel insulating layer(225) and a sidewall of the floating gate. A multilayer control gate(CG) surrounds the floating gate. An interlayer insulating film is formed between the multilayered control gates.