| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to uniformly form a single sidewall contact by using a first and a second sacrificial dielectric film which are formed on a SOC(Spin On Carbon) film. CONSTITUTION: A second sacrificial dielectric film(52) is etched to have a second height which is higher than a first height. A third liner film is etched to expose the second sacrificial dielectric film. The second sacrificial dielectric film is removed. A first liner film(41) remaining between the first height and the second height is removed.</p> |
