| 摘要 |
<p>PURPOSE: A light emitting device is provided to reduce the lattice mismatch between a buffer layer and a light emitting structure by using a buffer layer made of nitride. CONSTITUTION: A buffer layer(210) is arranged on an R-plane sapphire substrate. The buffer layer is made of nitride having a rock salt structure. A light emitting structure(120) is arranged on the buffer layer. The light emitting structure includes a first conductive semiconductor layer(122), an active layer(124), and a second conductive semiconductor layer(126). The light emitting structure includes A-plane GaN.</p> |
