PLASMA REACTOR HAVING DUAL INDUCTIVELY COUPLED PLASMA SOURCE

摘要

PURPOSE: A plasma reactor including a dual induction coupling plasma source is provided to effectively execute a bosh process by uniformly processing a wafer substrate. CONSTITUTION: A plasma reactor(10) includes a plasma reactor body(12) and a dual induction coupling plasma source(20). The plasma reactor includes a substrate processing area and a dielectric window which touches the substrate processing area. The dual induction coupling plasma source includes a first antenna providing a first induced electromotive force for generating plasma in a core area of a substrate processing area through a dielectric window and a second antenna providing a second induced electromotive force for generating the plasma in a boundary area of the substrate processing area. The dual induction coupling plasma source repetitively executes an evaporation process and an engraving process and generates a penetrated silicon path for a processed substrate. [Reference numerals] (42,46,52) Impedance matcher; (60) Vacuum pump