| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to improve integration of a memory device by three-dimensionally arranging a plurality of memory strings in x, y, and z directions. CONSTITUTION: A laminate structure(110) is formed on a semiconductor substrate(101) and includes a plurality of first insulation layers(103a-103d) and a plurality of silicon layers(105a-105d) which are alternatively laminated. A slit(121) divides the laminate structure into at least one memory block unit. A first drain contact plug is connected to each silicon layer of the laminate structure via the lowermost silicon layer of the laminate structure. Vertical gate lines are arranged between a source line(SL) and a first drain contact plug. A metal wire(ML1) is connected to the first drain contact plugs, the vertical gate lines, and the source lines.</p> |
