发明名称 SUBSTRATE PROCESSING APPARATUS AND FILM FORMING APPARATUS
摘要 PURPOSE: A substrate processing apparatus and a film forming apparatus are provided to prevent the deterioration of a throughput by quickly heating a substrate loaded on a rotary table. CONSTITUTION: A substrate processing apparatus includes a processing container, a rotary table(2), and a heater(41). The rotary table is installed in the processing container and loads a substrate(W) on one side thereof. The rotary table includes a table body(22) and a plurality of wafer loading plates. The wafer loading plate is formed in a substrate loading region and has a smaller thermal capacity than the table body. A heater heats the substrate from the other side of the rotary table.
申请公布号 KR20130024829(A) 申请公布日期 2013.03.08
申请号 KR20120094759 申请日期 2012.08.29
申请人 TOKYO ELECTRON LIMITED 发明人 ENOMOTO TADASHI;OHIZUMI YUKIO;HONMA MANABU
分类号 H01L21/205 主分类号 H01L21/205
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