发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING METAL REFLECTING LAYER
摘要 PURPOSE: A semiconductor light emitting device is provided to prevent the deterioration of a metal reflection layer by interposing a barrier layer between a light transmissive conductive layer and the metal reflection layer. CONSTITUTION: A semiconductor structure(11) includes an active region(8). A light transmissive conductive layer(13) is formed on the upper side of the semiconductor structure. A dielectric layer(4) is formed on the upper side of the light transmissive conductive layer. A metal reflection layer(22) is formed on the upper side of the dielectric layer. The dielectric layer has one or more opening parts(21) to partially expose the light transmissive conductive layer. The light transmissive conductive layer is electrically connected to the metal reflection layer by interposing the opening part. A barrier layer(24) is interposed between the light transmissive conductive layer and the metal reflection layer.
申请公布号 KR20130024852(A) 申请公布日期 2013.03.08
申请号 KR20120095526 申请日期 2012.08.30
申请人 NICHIA CORPORATION 发明人 KUSUSE TAKESHI;AZUMA NAOKI;OGAWA TOSHIAKI;KASAI HISASHI
分类号 H01L33/46;H01L33/36 主分类号 H01L33/46
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