发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE: A method for manufacturing a semiconductor substrate is provided to prevent the warpage of a substrate by using a laser. CONSTITUTION: A substrate is prepared in a reactor(S311). The substrate has a convex surface. A semiconductor substrate is grown in the convex surface by using mixed gas(S312). Laser is irradiated on the semiconductor substrate to separate the substrate from a semiconductor substrate(S313). [Reference numerals] (AA) Start; (BB) End; (S311) Installing a substrate in a reactor; (S312) Growing a semiconductor substrate on a convex surface of the substrate; (S313) Separating the substrate and the semiconductor substrate by irradiating laser; (S314) Washing the surface of the separated semiconductor substrate
申请公布号 KR20130024474(A) 申请公布日期 2013.03.08
申请号 KR20110087946 申请日期 2011.08.31
申请人 SAMSUNG CORNING PRECISION MATERIALS CO., LTD. 发明人 BAE, JUN YOUNG;KIM, KYOUNG JUN;KONG, SUN HWAN;EO, SUNG WOO;LEE, WON JO;LEE, DONG WOOK;PARK, CHEOL MIN;PARK, HYUN JONG;CHOI, JUN SUNG
分类号 H01L21/20 主分类号 H01L21/20
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