PURPOSE: A method for manufacturing a semiconductor substrate is provided to prevent the warpage of a substrate by using a laser. CONSTITUTION: A substrate is prepared in a reactor(S311). The substrate has a convex surface. A semiconductor substrate is grown in the convex surface by using mixed gas(S312). Laser is irradiated on the semiconductor substrate to separate the substrate from a semiconductor substrate(S313). [Reference numerals] (AA) Start; (BB) End; (S311) Installing a substrate in a reactor; (S312) Growing a semiconductor substrate on a convex surface of the substrate; (S313) Separating the substrate and the semiconductor substrate by irradiating laser; (S314) Washing the surface of the separated semiconductor substrate
申请公布号
KR20130024474(A)
申请公布日期
2013.03.08
申请号
KR20110087946
申请日期
2011.08.31
申请人
SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
发明人
BAE, JUN YOUNG;KIM, KYOUNG JUN;KONG, SUN HWAN;EO, SUNG WOO;LEE, WON JO;LEE, DONG WOOK;PARK, CHEOL MIN;PARK, HYUN JONG;CHOI, JUN SUNG