Non-volatile static RAM cell for use in e.g. programmable logic circuit, has resistive storage units connected to storage nodes, where storage units are formed by zone of variable-resistance material arranged between electrodes

摘要

The cell (100) has resistive storage units (N1, N2) connected to two storage nodes (T, F), where the resistive storage units are formed by a zone of variable-resistance material arranged between electrodes. Gates of two driver transistors are connected to the storage nodes. Two access transistors (TA1, TA') are respectively connected between the storage nodes and two bit lines (BL1, BL2), and connected with a word line. The storage units comprise resistive RAM, phase change memory, conductive bridging RAM or metal-oxide RAM cell element. The variable-resistance material is a dielectric material such as transition metal oxide.