Deposition system for semiconductor material on substrate in semiconductor device manufacture, has precursor gas flow path with section having serpentine configuration that provides laminar flow of precursor gases

摘要

The deposition system (100) has a susceptor (114) that is disposed partially within a reaction chamber (102), and supports a substrate (116) within the reaction chamber. A gas input system injects one or more precursor gases into the reaction chamber, and having at least one precursor gas furnace (130) disposed within the reaction chamber. A precursor gas flow path extends through the precursor gas furnace, and having at least one section with serpentine configuration that provides laminar flow of one or more precursor gases caused to flow through the flow path. An independent claim is included for a method of depositing semiconductor material.