发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF
摘要 <p>The TFT substrate (100A) in the present invention includes a thin film transistor, a gate line (3a), a source line (13as), and first and second terminals (40a, 40b) for electrically connecting the thin film transistor to an external wiring which are formed on a substrate (1). The first terminal includes a first gate terminal portion (41a) and a first pixel electrode line (29a). The first pixel electrode line is in contact with the first gate terminal portion in a first opening portion (27c) provided in an insulating film (5), and covers an end face of the insulating film in the first opening portion. The second terminal includes a second gate terminal portion (41b) and a second pixel electrode line (29b). The second pixel electrode line is in contact with the second gate terminal portion in a second opening portion (27d) provided in the insulating film, and covers an end face of the insulating film in the second opening portion.</p>
申请公布号 KR20130024952(A) 申请公布日期 2013.03.08
申请号 KR20137001095 申请日期 2011.06.21
申请人 SHARP KABUSHIKI KAISHA 发明人 MISAKI KATSUNORI
分类号 G02F1/1368;G02F1/1345;H01L29/786 主分类号 G02F1/1368
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