发明名称 SILICON NANOWIRE DEVICE
摘要 PURPOSE: A silicon nanowire element is provided to maintain the element on a substrate, where the element is generated, without transferring the element to other substrates after manufacturing, thereby preventing a nanowire from being cut, damage to the nanowire, and a short circuit caused by a transferring process. CONSTITUTION: A silicon nanowire element comprises a first conductive silicon substrate(110) and a second conductive nanowire(120). The second conductive nanowire is formed to be spaced from the first conductive silicon substrate, and both ends of the second conductive nanowire are connected to the first conductive silicon substrate.
申请公布号 KR20130024646(A) 申请公布日期 2013.03.08
申请号 KR20110088210 申请日期 2011.08.31
申请人 KOREA ELECTRONICS TECHNOLOGY INSTITUTE 发明人 JUNG, SUK WON;SEONG, WOO KYEONG;LEE, KOOK NYONG;LEE, MIN HO
分类号 G01N27/403;B82B1/00;B82Y35/00;H01L21/336 主分类号 G01N27/403
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