发明名称 |
SILICON NANOWIRE DEVICE |
摘要 |
PURPOSE: A silicon nanowire element is provided to maintain the element on a substrate, where the element is generated, without transferring the element to other substrates after manufacturing, thereby preventing a nanowire from being cut, damage to the nanowire, and a short circuit caused by a transferring process. CONSTITUTION: A silicon nanowire element comprises a first conductive silicon substrate(110) and a second conductive nanowire(120). The second conductive nanowire is formed to be spaced from the first conductive silicon substrate, and both ends of the second conductive nanowire are connected to the first conductive silicon substrate. |
申请公布号 |
KR20130024646(A) |
申请公布日期 |
2013.03.08 |
申请号 |
KR20110088210 |
申请日期 |
2011.08.31 |
申请人 |
KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
JUNG, SUK WON;SEONG, WOO KYEONG;LEE, KOOK NYONG;LEE, MIN HO |
分类号 |
G01N27/403;B82B1/00;B82Y35/00;H01L21/336 |
主分类号 |
G01N27/403 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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